JPH0479424U - - Google Patents
Info
- Publication number
- JPH0479424U JPH0479424U JP1990122541U JP12254190U JPH0479424U JP H0479424 U JPH0479424 U JP H0479424U JP 1990122541 U JP1990122541 U JP 1990122541U JP 12254190 U JP12254190 U JP 12254190U JP H0479424 U JPH0479424 U JP H0479424U
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- source
- soi
- drain
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990122541U JPH0479424U (en]) | 1990-11-23 | 1990-11-23 | |
| KR1019910018498A KR100238699B1 (ko) | 1990-11-23 | 1991-10-21 | Soimos트랜지스터 |
| US08/213,815 US5395772A (en) | 1990-11-23 | 1994-03-17 | SOI type MOS transistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990122541U JPH0479424U (en]) | 1990-11-23 | 1990-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0479424U true JPH0479424U (en]) | 1992-07-10 |
Family
ID=14838427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990122541U Pending JPH0479424U (en]) | 1990-11-23 | 1990-11-23 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5395772A (en]) |
| JP (1) | JPH0479424U (en]) |
| KR (1) | KR100238699B1 (en]) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6777763B1 (en) * | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
| US5472894A (en) * | 1994-08-23 | 1995-12-05 | United Microelectronics Corp. | Method of fabricating lightly doped drain transistor device |
| US5705405A (en) * | 1994-09-30 | 1998-01-06 | Sgs-Thomson Microelectronics, Inc. | Method of making the film transistor with all-around gate electrode |
| US5744372A (en) * | 1995-04-12 | 1998-04-28 | National Semiconductor Corporation | Fabrication of complementary field-effect transistors each having multi-part channel |
| US5891782A (en) * | 1997-08-21 | 1999-04-06 | Sharp Microelectronics Technology, Inc. | Method for fabricating an asymmetric channel doped MOS structure |
| US6049230A (en) * | 1998-03-06 | 2000-04-11 | International Business Machines Corporation | Silicon on insulator domino logic circuits |
| US5917199A (en) * | 1998-05-15 | 1999-06-29 | Ois Optical Imaging Systems, Inc. | Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same |
| CN100442521C (zh) * | 2000-08-17 | 2008-12-10 | 株式会社东芝 | 半导体存储装置 |
| KR101827848B1 (ko) * | 2010-10-22 | 2018-03-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비한 표시 장치 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58142566A (ja) * | 1982-02-19 | 1983-08-24 | Seiko Epson Corp | 薄膜半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900001267B1 (ko) * | 1983-11-30 | 1990-03-05 | 후지쓰 가부시끼가이샤 | Soi형 반도체 장치의 제조방법 |
| US4939558A (en) * | 1985-09-27 | 1990-07-03 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
| JP2551127B2 (ja) * | 1989-01-07 | 1996-11-06 | 三菱電機株式会社 | Ｍｉｓ型半導体装置およびその製造方法 |
| US5170232A (en) * | 1989-08-24 | 1992-12-08 | Nec Corporation | MOS field-effect transistor with sidewall spacers |
-
1990
- 1990-11-23 JP JP1990122541U patent/JPH0479424U/ja active Pending
-
1991
- 1991-10-21 KR KR1019910018498A patent/KR100238699B1/ko not_active Expired - Fee Related
-
1994
- 1994-03-17 US US08/213,815 patent/US5395772A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58142566A (ja) * | 1982-02-19 | 1983-08-24 | Seiko Epson Corp | 薄膜半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100238699B1 (ko) | 2000-01-15 |
| US5395772A (en) | 1995-03-07 |
| KR920010955A (ko) | 1992-06-27 |